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ROHM 2SB1386T100R Bipolar (BJT) Single Transistor, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE Hoya A-62CRPLHRT 50 uS de-emphasis Specifications Sensitivity

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ROHM 2SB1386T100R Bipolar (BJT) Single Transistor, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE Hoya A 62CRPLHRT 50 uS de emphasis Specifications Sensitivity 50 uS de emphasis Specifications Sensitivity IR: better than 1 nW cm2 @40 dB SNR Squelch IR: programmable in 20 steps red Controls Gain: Control

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